 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC3515 TOSHIBA Transistor Silicon NPN Triple Diffused Type (PCT process) 2SC3515 HIGH Voltage Control Applications Plasma Display, Nixie Tube Driver Applications Cathode Ray Tube Brightness Control Applications * * * * * * High voltage: VCBO = 300 V, VCEO = 300 V Low saturation voltage: VCE (sat) = 0.5 V (max) Small collector output capacitance: Cob = 3 pF (typ.) Complementary to 2SA1384 Small flat package PC = 1.0 to 2.0 W (mounted on a ceramic substrate) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Symbol VCBO VCEO VEBO IC IB PC Collector power dissipation PC (Note 1) Junction temperature Storage temperature range Tj Tstg Rating 300 300 6 100 20 500 1000 150 -55 to 150 2 Unit V V V mA mA PW-MINI JEDEC JEITA TOSHIBA SC-62 2-5K1A mW Weight: 0.05 g (typ.) C C Note 1: Mounted on a ceramic substrate (250 mm x 0.8 mmt) 1 2004-07-07 2SC3515 Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol ICBO IEBO V (BR) CBO V (BR) CEO hFE (1) DC current gain (Note 2) hFE (2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE (sat) VBE (sat) fT Cob Test Condition VCB = 300 V, IE = 0 VEB = 6 V, IC = 0 IC = 0.1 mA, IE = 0 IC = 1 mA, IB = 0 VCE = 10 V, IC = 20 mA VCE = 10 V, IC = 20 mA IC = 20 mA, IB = 2 mA IC = 20 mA, IB = 2 mA VCE = 10 V, IC = 20 mA VCB = 20 V, IE = 0, f = 1 MHz Min 300 300 30 20 50 Typ. 80 3 Max 0.1 0.1 150 0.5 1.0 4 V V MHz pF Unit A A V V Note 2: hFE (1) classification R: 30 to 90, O: 50 to 150 Marking Part No. (or abbreviation code) I Lot No. Characteristics indicator A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-07 2SC3515 IC - VCE (low voltage region) 120 Common emitter 10 Ta = 25C 100 120 Common emitter Ta = 100C 10 7 80 5 4 3 2 1 0.6 0.4 0.2 IB = 0.1 mA 0 2 4 6 8 10 12 14 IC - VCE (low voltage region) 100 (mA) Collector current IC 2 60 1 0.8 0.6 0.5 0.4 0.3 20 0.2 IB = 0.1 mA 0 0 2 4 6 8 10 12 0 14 Collector current IC (V) 80 3 (mA) 60 40 20 5 40 0 0 Collector-emitter voltage VCE Collector-emitter voltage VCE (V) IC - VCE (low voltage region) 120 Common emitter 100 10 5 3 80 2 Ta = -55C 10 100 90 80 8 12 IC - VCE (low current region) Common emitter Ta = 25C (mA) (mA) Collector current IC 60 1 0.8 Collector current IC 70 60 50 40 30 6 40 0.6 0.5 0.4 0.3 0.2 IB = 0.1 mA 2 4 6 8 10 12 0 14 4 20 2 20 IB = 10 A 0 40 80 120 160 200 240 280 0 0 0 0 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) IC - VCE (low current region) 12 Common emitter 10 80 70 60 8 50 40 30 20 2 IB = 10 A 0 40 80 120 160 200 240 280 0 0 Ta = 100C 8 10 Common emitter Ta = -55C IC - VCE (low current region) (mA) (mA) Collector current IC Collector current IC 6 100 90 6 4 80 70 60 50 40 30 20 IB = 10 A 40 80 120 160 200 240 4 2 0 0 0 280 Collector-emitter voltage VCE (V) Collector-emitter voltage VCE (V) 3 2004-07-07 2SC3515 hFE - IC 500 300 Common emitter Ta = 25C VCE = 10 V 500 300 hFE - IC Common emitter VCE = 10 V Ta = 100C 100 50 30 25 -55 hFE 100 50 30 1 DC current gain 5 10 5 3 0.1 0.3 1 3 10 30 100 DC current gain hFE 10 5 3 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) VCE (sat) - IC Collector-emitter saturation voltage VCE (sat) (V) 3 10 VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Common emitter IC/IB = 10 5 3 Common emitter IC/IB = 10 1 0.5 0.3 Ta = 100C 1 0.5 0.3 Ta = -55C 0.1 0.05 0.03 0.1 0.3 1 25 -55 25 100 3 10 30 100 0.1 0.1 0.3 1 3 10 30 100 Collector current IC (mA) Collector current IC (mA) fT - IC 500 (MHz) Common emitter 300 Ta = 25C Collector input capacitance Cib (pF) Collector output capacitance Cob (pF) Cib, Cob - VR 300 f = 1 MHz 100 50 30 Cib (IC = 0) Ta = 25C fT Transition frequency 100 50 30 VCE = 20 V 5 10 10 5 3 Cob (IE = 0) 10 0.3 1 3 10 30 1 0.1 0.3 1 3 10 30 100 300 Collector current IC (mA) Reverse voltage VR (V) 4 2004-07-07 2SC3515 PC - Ta 1.2 500 (1) (1) Mounted on ceramic substrate 2 (250 mm x 0.8 mmt) (2) No heat sink 0.8 300 Safe Operating Area IC max (pulse) IC max (continuous) 10 ms* 1 ms* PC (W) 1.0 100 100 ms* Collector power dissipation (mA) 50 30 DC operation Ta = 25C 10 5 3 0.6 0.4 0.2 Collector current IC 20 40 60 80 100 120 140 160 (2) 0 0 1 *: Single no repetitive pulse 0.5 0.3 Ta = 25C Curves must be derated linearly with increase in temperature VCEO max Tested without a substrate. 3 10 30 100 300 1000 Ambient temperature Ta (C) 0.1 1 Collector-emitter voltage VCE (V) 5 2004-07-07 2SC3515 RESTRICTIONS ON PRODUCT USE * The information contained herein is subject to change without notice. 030619EAA * The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. * TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the "Handling Guide for Semiconductor Devices," or "TOSHIBA Semiconductor Reliability Handbook" etc.. * The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). These TOSHIBA products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliability or a malfunction or failure of which may cause loss of human life or bodily injury ("Unintended Usage"). Unintended Usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. Unintended Usage of TOSHIBA products listed in this document shall be made at the customer's own risk. * TOSHIBA products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 6 2004-07-07 |
Price & Availability of 2SC351504
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |